Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free. The TOAB package is universally preferred for all.
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Data Sheet. January All of. These types can be operated directly from integrated. Formerly developmental type TA Ordering Information. NOTE: When ordering, include the entire part number. Drain to Source Breakdown Voltage Note 1. V DGR. Continuous Drain Current. Pulsed Drain Current Note 2. Gate to Source Voltage. Maximum Power Dissipation.
Linear Derating Factor. Operating and Storage Temperature. Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation of the. Drain to Source Breakdown Voltage. Gate to Source Threshold Voltage. Zero Gate Voltage Drain Current. I DSS. On-State Drain Current Note 4. Gate to Source Leakage.
I GSS. Drain to Source On Resistance Note 2. Forward Transconductance Note 4. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge. Gate to Source Charge. Q g TOT. Figure 14 Gate Charge is Essentially Independent of. Operating Temperature. Input Capacitance. C ISS. Output Capacitance. Reverse Transfer Capacitance. C OSS. C RSS. Internal Drain Inductance. Internal Source Inductance.
Lead, 6mm 0. Package to Center of Die Internal Devices. Measured from the Source Inductances. Header to Source Bonding. Thermal Resistance Junction to Case. Thermal Resistance Junction to Ambient. Typical Socket Mount. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits. P D Linear Derating Factor. NOTE: 1.
IRFBC40 MOSFET. Datasheet pdf. Equivalent